BAS516,L3F
Toshiba Semiconductor and Storage
Product No:
BAS516,L3F
Manufacturer:
Package:
ESC
Batch:
-
Datasheet:
-
Description:
DIODE GEN PURP 100V 250MA ESC
Quantity:
Delivery:
Payment:
In Stock : 70758 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.121
1.121
10
0.91485
9.1485
100
0.711455
71.1455
500
0.60306
301.53
1000
0.491254
491.254
2000
0.46246
924.92
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Product Status | Active |
| Base Product Number | BAS516 |
| Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz |
| Supplier Device Package | ESC |
| Reverse Recovery Time (trr) | 3 ns |
| Current - Reverse Leakage @ Vr | 200 nA @ 80 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 250mA |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
