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BSZ180P03NS3EGATMA1

Infineon Technologies

Product No:

BSZ180P03NS3EGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 9A/39.5A TSDSON

Quantity:

Delivery:

Payment:

In Stock : 9990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.7505

    0.7505

  • 10

    0.6631

    6.631

  • 100

    0.508535

    50.8535

  • 500

    0.40204

    201.02

  • 1000

    0.321622

    321.622

  • 2000

    0.291479

    582.958

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 3.1V @ 48µA
Base Product Number BSZ180
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.5A (Tc)