Diodes Incorporated
Product No:
DMN10H170SFG-13
Manufacturer:
Package:
PowerDI3333-8
Batch:
-
Description:
MOSFET N-CH 100V PWRDI3333
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.551
0.551
10
0.47215
4.7215
25
0.4408
11.02
100
0.352735
35.2735
250
0.32756
81.89
500
0.277153
138.5765
1000
0.214168
214.168
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Mfr | Diodes Incorporated |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Base Product Number | DMN10 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 122mOhm @ 3.3A, 10V |
Power Dissipation (Max) | 940mW (Ta) |
Supplier Device Package | PowerDI3333-8 |
Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 870.7 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 8.5A (Tc) |