DMN10H170SFG-7
Diodes Incorporated
Product No:
DMN10H170SFG-7
Manufacturer:
Package:
POWERDI3333-8
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V PWRDI3333
Quantity:
Delivery:
Payment:
In Stock : 2000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.551
0.551
10
0.47215
4.7215
25
0.4408
11.02
100
0.352735
35.2735
250
0.32756
81.89
500
0.277153
138.5765
1000
0.214168
214.168
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Base Product Number | DMN10 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 3.3A, 10V |
| Power Dissipation (Max) | 940mW (Ta) |
| Supplier Device Package | POWERDI3333-8 |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870.7 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 8.5A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
