G12P10TE

Goford Semiconductor

Product No:

G12P10TE

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

P-100V,-12A,RD(MAX)<200M@-10V,VT

Quantity:

Delivery:

Payment:

In Stock : 75

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.722

    0.722

  • 10

    0.6232

    6.232

  • 100

    0.431775

    43.1775

  • 500

    0.360772

    180.386

  • 1000

    0.30704

    307.04

  • 2000

    0.273458

    546.916

  • 5000

    0.259065

    1295.325

  • 10000

    0.239875

    2398.75

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)