G3R350MT12J
GeneSiC Semiconductor
Product No:
G3R350MT12J
Manufacturer:
Package:
TO-263-7
Batch:
-
Datasheet:
Description:
SIC MOSFET N-CH 11A TO263-7
Quantity:
Delivery:
Payment:
In Stock : 5712 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.2345
5.2345
10
4.6702
46.702
25
4.46234
111.5585
100
4.1648
416.48
250
3.97955
994.8875
500
3.844669
1922.3345
1000
3.713569
3713.569
2500
3.54825
8870.625
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | GeneSiC Semiconductor |
| Series | G3R™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Base Product Number | G3R350 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| Power Dissipation (Max) | 75W (Tc) |
| Supplier Device Package | TO-263-7 |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
