HN4B01JE(TE85L,F)

Toshiba Semiconductor and Storage

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HN4B01JE(TE85L,F)

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Package:

ESV

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Description:

TRANS NPN/PNP 50V 0.15A ESV PLN

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In Stock : 3745

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Product Status	Active
Transistor Type	NPN, PNP (Emitter Coupled)
Base Product Number	HN4B01
Operating Temperature	150°C (TJ)
Frequency - Transition	80MHz
Supplier Device Package	ESV
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)	150mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)	50V