Vishay Siliconix
Product No:
IRFBG30PBF-BE3
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 1000V 3.1A TO220AB
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.337
2.337
10
1.94465
19.4465
100
1.54793
154.793
500
1.309765
654.8825
1000
1.11131
1111.31
2000
1.055744
2111.488
5000
1.016054
5080.27
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Mfr | Vishay Siliconix |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Base Product Number | IRFBG30 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 5Ohm @ 1.9A, 10V |
Power Dissipation (Max) | 125W (Tc) |
Supplier Device Package | TO-220AB |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
Drain to Source Voltage (Vdss) | 1000 V |
Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |