IRLD110PBF

Vishay Siliconix

Product No:

IRLD110PBF

Manufacturer:

Vishay Siliconix

Package:

4-HVMDIP

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 1A 4DIP

Quantity:

Delivery:

Payment:

In Stock : 2409

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.577

    1.577

  • 10

    1.4136

    14.136

  • 100

    1.136295

    113.6295

  • 500

    0.933584

    466.792

  • 1000

    0.773547

    773.547

  • 2000

    0.720204

    1440.408

  • 5000

    0.693528

    3467.64

  • 10000

    0.666852

    6668.52

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Product Information

Parameter Info
User Guide
Mfr Vishay Siliconix
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Base Product Number IRLD110
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 5V
Power Dissipation (Max) 1.3W (Ta)
Supplier Device Package 4-HVMDIP
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)