IV1Q12160T4
Inventchip
Product No:
IV1Q12160T4
Manufacturer:
Package:
TO-247-4
Batch:
-
Datasheet:
Description:
SIC MOSFET, 1200V 160MOHM, TO-24
Quantity:
Delivery:
Payment:
In Stock : 106 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
17.1285
17.1285
10
15.0879
150.879
100
13.0492
1304.92
500
11.825828
5912.914
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Product Information
Parameter Info
User Guide
| Mfr | Inventchip |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.9V @ 1.9mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V |
| Power Dissipation (Max) | 138W (Tc) |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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