Samsung Semiconductor, Inc.
Product No:
K4B4G1646E-BYK000
Manufacturer:
Package:
-
Batch:
-
Datasheet:
-
Description:
DDR3-1600 4GB (256MX16)1.25NS CL
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
224
4.75
1064
448
4.5125
2021.6
672
4.4175
2968.56
896
4.3225
3872.96
1120
4.0375
4522
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | Samsung Semiconductor, Inc. |
Series | - |
Package | Tray |
Memory Size | 4Gbit |
Memory Type | Volatile |
Memory Format | DRAM |
Mounting Type | Surface Mount |
Package / Case | 96-TFBGA |
Product Status | Active |
Clock Frequency | 800 MHz |
Memory Interface | Parallel |
Voltage - Supply | 1.35V |
Memory Organization | 256M x 16 |
DigiKey Programmable | Not Verified |
Operating Temperature | 0°C ~ 95°C |