MSCSM120DAM31CTBL1NG
Microchip Technology
Product No:
MSCSM120DAM31CTBL1NG
Manufacturer:
Package:
-
Batch:
-
Datasheet:
Description:
PM-MOSFET-SIC-SBD-BL1
Quantity:
Delivery:
Payment:
In Stock : 7 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
112.9835
112.9835
100
83.94219
8394.219
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Product Information
Parameter Info
User Guide
| Mfr | Microchip Technology |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Base Product Number | MSCSM120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Power Dissipation (Max) | 310W |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 79A |
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