Harris Corporation
Product No:
RFD20N03
Manufacturer:
Package:
I-PAK
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
740
0.3895
288.23
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Mfr | Harris Corporation |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
Power Dissipation (Max) | 90W (Tc) |
Supplier Device Package | I-PAK |
Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |