RN1112,LXHF(CT

Toshiba Semiconductor and Storage

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RN1112,LXHF(CT

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Package:

SSM

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Description:

AUTO AEC-Q NPN Q1BSR=22K, VCEO=5

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In Stock : 6000

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Product Status	Active
Transistor Type	NPN - Pre-Biased
Base Product Number	RN1112
Resistor - Base (R1)	22 kOhms
Frequency - Transition	250 MHz
Supplier Device Package	SSM
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V