RN1112MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN1112MFV,L3F

Package:

VESM

Batch:

-

Datasheet:

-

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : 8000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.1615

    0.1615

  • 10

    0.1178

    1.178

  • 100

    0.063365

    6.3365

  • 500

    0.049742

    24.871

  • 1000

    0.034542

    34.542

  • 2000

    0.028614

    57.228

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Active
Transistor Type NPN - Pre-Biased
Base Product Number RN1112
Resistor - Base (R1) 22 kOhms
Supplier Device Package VESM
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V