RN1710JE(TE85L,F)
Toshiba Semiconductor and Storage
Product No:
RN1710JE(TE85L,F)
Manufacturer:
Package:
ESV
Batch:
-
Datasheet:
-
Description:
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Quantity:
Delivery:
Payment:
In Stock : 3863 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.3705
0.3705
10
0.2603
2.603
100
0.13129
13.129
500
0.107084
53.542
1000
0.079448
79.448
2000
0.066842
133.684
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Base Product Number | RN1710 |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ESV |
| Resistor - Emitter Base (R2) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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