RN2106MFV,L3F(CT

Toshiba Semiconductor and Storage

Product No:

RN2106MFV,L3F(CT

Package:

VESM

Batch:

-

Datasheet:

-

Description:

TRANS PREBIAS PNP 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : 33

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.1615

    0.1615

  • 10

    0.1178

    1.178

  • 100

    0.063365

    6.3365

  • 500

    0.049742

    24.871

  • 1000

    0.034542

    34.542

  • 2000

    0.028614

    57.228

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Active
Transistor Type PNP - Pre-Biased
Base Product Number RN2106
Resistor - Base (R1) 4.7 kOhms
Frequency - Transition 250 MHz
Supplier Device Package VESM
Resistor - Emitter Base (R2) 47 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V