RN2910FE,LF(CT
Toshiba Semiconductor and Storage
Product No:
RN2910FE,LF(CT
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
Description:
TRANS 2PNP PREBIAS 0.1W ES6
Quantity:
Delivery:
Payment:
In Stock : 4000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.2565
0.2565
10
0.20615
2.0615
100
0.109345
10.9345
500
0.071972
35.986
1000
0.048934
48.934
2000
0.044137
88.274
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Base Product Number | RN2910 |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 200MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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