SI4850BDY-T1-GE3
Vishay Siliconix
Product No:
SI4850BDY-T1-GE3
Manufacturer:
Package:
8-SO
Batch:
-
Datasheet:
Description:
MOSFET N-CH 60V 8.4A/11.3A 8SO
Quantity:
Delivery:
Payment:
In Stock : 8970 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.893
0.893
10
0.73435
7.3435
100
0.571235
57.1235
500
0.484196
242.098
1000
0.39443
394.43
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Base Product Number | SI4850 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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