SIDR638DP-T1-RE3
Vishay Siliconix
Product No:
SIDR638DP-T1-RE3
Manufacturer:
Package:
PowerPAK® SO-8DC
Batch:
-
Datasheet:
Description:
N-CHANNEL 40-V (D-S) MOSFET
Quantity:
Delivery:
Payment:
In Stock : 6000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.071
2.071
10
1.7214
17.214
100
1.370185
137.0185
500
1.159361
579.6805
1000
0.983696
983.696
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 64.6A (Ta), 100A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
