STB11NM60N-1
STMicroelectronics
Product No:
STB11NM60N-1
Manufacturer:
Package:
I2PAK
Batch:
-
Datasheet:
Description:
MOSFET N-CH 600V 10A I2PAK
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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Product Information
Parameter Info
User Guide
| Mfr | STMicroelectronics |
| Series | MDmesh™ II |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | STB11N |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| Power Dissipation (Max) | 90W (Tc) |
| Supplier Device Package | I2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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