TP65H150G4LSG

Transphorm

Product No:

TP65H150G4LSG

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

Batch:

-

Datasheet:

-

Description:

GAN FET N-CH 650V PQFN

Quantity:

Delivery:

Payment:

In Stock : 2981

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    4.807

    4.807

  • 10

    4.31395

    43.1395

  • 100

    3.53457

    353.457

  • 500

    3.008916

    1504.458

  • 1000

    2.53764

    2537.64

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Product Information

Parameter Info
User Guide
Mfr Transphorm
Series -
Package Cut Tape (CT)
FET Type N-Channel
Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Surface Mount
Package / Case 2-PowerTSFN
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 500µA
Base Product Number TP65H150
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Power Dissipation (Max) 52W (Tc)
Supplier Device Package 2-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)