Transphorm
Product No:
TP65H150G4LSG-TR
Manufacturer:
Package:
2-PQFN (8x8)
Batch:
-
Datasheet:
-
Description:
650 V 13 A GAN FET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.0065
5.0065
10
4.20565
42.0565
100
3.402425
340.2425
500
3.024344
1512.172
1000
2.589596
2589.596
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Mfr | Transphorm |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 2-PowerTSFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.8V @ 500µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
Power Dissipation (Max) | 52W (Tc) |
Supplier Device Package | 2-PQFN (8x8) |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |