TRS12N65FB,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS12N65FB,S1Q

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Package:

TO-247

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Description:

SIC SBD TO-247 V=650 IF=12A

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Base Product Number	TRS12N65
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Current - Average Rectified (Io) (per Diode)	6A (DC)