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TRS16N65FB,S1F(S

Toshiba Semiconductor and Storage

Product No:

TRS16N65FB,S1F(S

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

DODE SCHOTTKY 650V TO247

Quantity:

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Base Product Number TRS16N65
Diode Configuration 1 Pair Common Cathode
Supplier Device Package TO-247
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Current - Average Rectified (Io) (per Diode) 8A (DC)