TSM60NB190CI C0G

Taiwan Semiconductor Corporation

Product No:

TSM60NB190CI C0G

Package:

ITO-220AB

Batch:

-

Datasheet:

Description:

MOSFET N-CH 600V 18A ITO220AB

Quantity:

Delivery:

Payment:

In Stock : 749

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    7.41

    7.41

  • 10

    6.34695

    63.4695

  • 100

    5.289505

    528.9505

  • 500

    4.667198

    2333.599

  • 1000

    4.200482

    4200.482

  • 2000

    3.936012

    7872.024

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Product Information

Parameter Info
User Guide
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number TSM60
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Power Dissipation (Max) 33.8W (Tc)
Supplier Device Package ITO-220AB
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1273 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)