Vishay General Semiconductor - Diodes Division
Product No:
VS-3C08ET07T-M3
Manufacturer:
Package:
TO-220AC
Batch:
-
Description:
650 V POWER SIC GEN 3 MERGED PIN
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.515
3.515
10
2.9507
29.507
100
2.386875
238.6875
500
2.121654
1060.827
1000
1.816656
1816.656
2000
1.71058
3421.16
5000
1.641125
8205.625
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Mfr | Vishay General Semiconductor - Diodes Division |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Capacitance @ Vr, F | 340pF @ 1V, 1MHz |
Supplier Device Package | TO-220AC |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 45 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 8A |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |