Vishay General Semiconductor - Diodes Division
Product No:
VS-3C10ET07T-M3
Manufacturer:
Package:
TO-220AC
Batch:
-
Description:
650 V POWER SIC GEN 3 MERGED PIN
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
4.408
4.408
10
3.70405
37.0405
100
2.99649
299.649
500
2.663572
1331.786
1000
2.280684
2280.684
2000
2.147504
4295.008
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Mfr | Vishay General Semiconductor - Diodes Division |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Base Product Number | VS-3C10 |
Capacitance @ Vr, F | 445pF @ 1V, 1MHz |
Supplier Device Package | TO-220AC |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |