18N20

Goford Semiconductor

Product No:

18N20

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Quantity:

Delivery:

Payment:

In Stock : 1924

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.8645

    0.8645

  • 10

    0.70965

    7.0965

  • 100

    0.552045

    55.2045

  • 500

    0.467951

    233.9755

  • 1000

    0.381197

    381.197

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series 18N20
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Power Dissipation (Max) 65.8W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tj)