18N20J

Goford Semiconductor

Product No:

18N20J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Batch:

-

Datasheet:

-

Description:

N200V, 18A,RD<0.16@10V,VTH1V~3V,

Quantity:

Delivery:

Payment:

In Stock : 141

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.8835

    0.8835

  • 10

    0.7258

    7.258

  • 100

    0.564205

    56.4205

  • 500

    0.478211

    239.1055

  • 1000

    0.389557

    389.557

  • 2000

    0.366719

    733.438

  • 5000

    0.349258

    1746.29

  • 10000

    0.333136

    3331.36

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Power Dissipation (Max) 65.8W (Tc)
Supplier Device Package TO-251
Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tj)