630A
Goford Semiconductor
Product No:
630A
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
-
Description:
N200V,RD(MAX)<280M@10V,VTH1V~3V,
Quantity:
Delivery:
Payment:
In Stock : 2440 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.76
0.76
10
0.65455
6.5455
100
0.45334
45.334
500
0.378803
189.4015
1000
0.322392
322.392
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Product Information
Parameter Info
User Guide
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 83W |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
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