G1K3N10G

Goford Semiconductor

Product No:

G1K3N10G

Manufacturer:

Goford Semiconductor

Package:

SOT-89

Batch:

-

Datasheet:

-

Description:

N100V, 5A,RD<130M@10V,VTH1V~2V,

Quantity:

Delivery:

Payment:

In Stock : 790

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.4725

    1.4725

  • 10

    1.22265

    12.2265

  • 100

    0.972895

    97.2895

  • 500

    0.823251

    411.6255

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-243AA
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
Power Dissipation (Max) 1.5W (Tc)
Supplier Device Package SOT-89
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)