Goford Semiconductor
Product No:
G30N02T
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
Quantity:
Delivery:
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 4.5V |
Power Dissipation (Max) | 40W (Ta) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Drain to Source Voltage (Vdss) | 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |