G30N02T

Goford Semiconductor

Product No:

G30N02T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 1.2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
Power Dissipation (Max) 40W (Ta)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)