G3S06504C

Global Power Technology-GPT

Product No:

G3S06504C

Package:

TO-252

Batch:

-

Datasheet:

Description:

DIODE SIL CARB 650V 11.5A TO252

Quantity:

Delivery:

Payment:

In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.869

    2.869

  • 10

    2.41205

    24.1205

  • 100

    1.951585

    195.1585

  • 500

    1.734776

    867.388

  • 1000

    1.485401

    1485.401

  • 2000

    1.398666

    2797.332

  • 5000

    1.341875

    6709.375

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Product Information

Parameter Info
User Guide
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Bulk
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Capacitance @ Vr, F 181pF @ 0V, 1MHz
Supplier Device Package TO-252
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 11.5A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A