G4S06515DT

Global Power Technology-GPT

Product No:

G4S06515DT

Package:

TO-263

Batch:

-

Datasheet:

Description:

DIODE SIL CARBIDE 650V 38A TO263

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Capacitance @ Vr, F 645pF @ 0V, 1MHz
Supplier Device Package TO-263
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 38A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 15 A