G65P06F
Goford Semiconductor
Product No:
G65P06F
Manufacturer:
Package:
TO-220F
Batch:
-
Datasheet:
Description:
P-CH, -60V, 65A, RD(MAX)<18M@-10
Quantity:
Delivery:
Payment:
In Stock : 196 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.0925
1.0925
10
0.8911
8.911
100
0.69312
69.312
500
0.587518
293.759
1000
0.4786
478.6
2000
0.450547
901.094
5000
0.429086
2145.43
10000
0.409288
4092.88
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Product Information
Parameter Info
User Guide
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| Power Dissipation (Max) | 39W (Tc) |
| Supplier Device Package | TO-220F |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6477 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
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