G700P06T

Goford Semiconductor

Product No:

G700P06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

Description:

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

Quantity:

Delivery:

Payment:

In Stock : 34

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.646

    0.646

  • 10

    0.56145

    5.6145

  • 100

    0.38855

    38.855

  • 500

    0.324691

    162.3455

  • 1000

    0.276336

    276.336

  • 2000

    0.246116

    492.232

  • 5000

    0.233158

    1165.79

  • 10000

    0.215888

    2158.88

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1428 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)