Goford Semiconductor
Product No:
GC11N65D5
Manufacturer:
Package:
8-DFN (4.9x5.75)
Batch:
-
Description:
N650V, 11A,RD<360M@10V,VTH2.5V~4
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.5865
1.5865
10
1.3167
13.167
100
1.047755
104.7755
500
0.886578
443.289
1000
0.752248
752.248
2000
0.714638
1429.276
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | Goford Semiconductor |
Series | G |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 78W (Tc) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |