GC11N65D5

Goford Semiconductor

Product No:

GC11N65D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

Description:

N650V, 11A,RD<360M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 3155

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.5865

    1.5865

  • 10

    1.3167

    13.167

  • 100

    1.047755

    104.7755

  • 500

    0.886578

    443.289

  • 1000

    0.752248

    752.248

  • 2000

    0.714638

    1429.276

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series G
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Power Dissipation (Max) 78W (Tc)
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)