GC11N65T

Goford Semiconductor

Product No:

GC11N65T

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Package:

TO-220

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Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

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Parameter Info

User Guide

Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Power Dissipation (Max)	78W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)