GC20N65T

Goford Semiconductor

Product No:

GC20N65T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 85

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.5935

    2.5935

  • 10

    2.1774

    21.774

  • 100

    1.76168

    176.168

  • 500

    1.565904

    782.952

  • 1000

    1.340802

    1340.802

  • 2000

    1.262512

    2525.024

  • 5000

    1.21125

    6056.25

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Power Dissipation (Max) 151W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1724 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)