GT011N03D5E

Goford Semiconductor

Product No:

GT011N03D5E

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

Description:

MOSFET N-CH ESD 30V 209A DFN5*6-

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.501

    1.501

  • 10

    1.2255

    12.255

  • 100

    0.95304

    95.304

  • 500

    0.807842

    403.921

  • 1000

    0.658074

    658.074

  • 2000

    0.619495

    1238.99

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 89W (Tc)
Supplier Device Package 8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 6503 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 209A (Tc)