Goford Semiconductor
Product No:
GT011N03D5E
Manufacturer:
Package:
8-DFN (4.9x5.75)
Batch:
-
Description:
MOSFET N-CH ESD 30V 209A DFN5*6-
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.501
1.501
10
1.2255
12.255
100
0.95304
95.304
500
0.807842
403.921
1000
0.658074
658.074
2000
0.619495
1238.99
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | - |
Power Dissipation (Max) | 89W (Tc) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 6503 pF @ 15 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |