Goford Semiconductor
Product No:
GT025N06AD5
Manufacturer:
Package:
8-DFN (4.9x5.75)
Batch:
-
Datasheet:
-
Description:
N60V, 170A, RD<2.2M@10V,VTH1.2V~
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.672
1.672
10
1.387
13.87
100
1.1039
110.39
500
0.934078
467.039
1000
0.792547
792.547
2000
0.752922
1505.844
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 20A, 10V |
Power Dissipation (Max) | 104W (Tc) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 5044 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |