GT025N06AM6

Goford Semiconductor

Product No:

GT025N06AM6

Manufacturer:

Goford Semiconductor

Package:

TO263-6

Batch:

-

Datasheet:

Description:

N60V,170A,RD<2.0M@10V,VTH1.2V~2.

Quantity:

Delivery:

Payment:

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2mOhm @ 20A, 10V
Power Dissipation (Max) 215W (Tc)
Supplier Device Package TO263-6
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 5058 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)