Goford Semiconductor
Product No:
GT035N06T
Manufacturer:
Package:
TO-220
Batch:
-
Description:
N-CH, 60V,170A, RD(MAX)<3.5M@10V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.843
1.843
10
1.5276
15.276
100
1.21619
121.619
500
1.029059
514.5295
1000
0.873145
873.145
2000
0.829492
1658.984
5000
0.798304
3991.52
10000
0.771875
7718.75
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
Power Dissipation (Max) | 215W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 5064 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |