GT042P06T

Goford Semiconductor

Product No:

GT042P06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

Description:

MOSFET, P-CH,-60V,-160A,RD(MAX)<

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.603

    2.603

  • 10

    2.1603

    21.603

  • 100

    1.7195

    171.95

  • 500

    1.454944

    727.472

  • 1000

    1.234496

    1234.496

  • 2000

    1.172775

    2345.55

  • 5000

    1.128676

    5643.38

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
Power Dissipation (Max) 280W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 9151 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)