GT100N12M
Goford Semiconductor
Product No:
GT100N12M
Manufacturer:
Package:
TO-263
Batch:
-
Datasheet:
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Quantity:
Delivery:
Payment:
In Stock : 733 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.558
1.558
10
1.29295
12.9295
100
1.02904
102.904
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Product Information
Parameter Info
User Guide
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 35A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Supplier Device Package | TO-263 |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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