GT105N10T

Goford Semiconductor

Product No:

GT105N10T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Quantity:

Delivery:

Payment:

In Stock : 220

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.235

    1.235

  • 10

    1.0108

    10.108

  • 100

    0.78584

    78.584

  • 500

    0.666083

    333.0415

  • 1000

    0.542602

    542.602

  • 2000

    0.510796

    1021.592

  • 5000

    0.486466

    2432.33

  • 10000

    0.464018

    4640.18

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10.5mOhm @ 35A, 10V
Power Dissipation (Max) 74W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)