Goford Semiconductor
Product No:
GT52N10D5
Manufacturer:
Package:
8-DFN (5.2x5.86)
Batch:
-
Datasheet:
-
Description:
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.425
1.425
10
1.1875
11.875
100
0.94487
94.487
500
0.799501
399.7505
1000
0.678366
678.366
2000
0.644452
1288.904
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 50A, 10V |
Power Dissipation (Max) | 79W (Tc) |
Supplier Device Package | 8-DFN (5.2x5.86) |
Gate Charge (Qg) (Max) @ Vgs | 44.5 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 2626 pF @ 50 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |