GT52N10D5

Goford Semiconductor

Product No:

GT52N10D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (5.2x5.86)

Batch:

-

Datasheet:

-

Description:

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

Quantity:

Delivery:

Payment:

In Stock : 15080

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.425

    1.425

  • 10

    1.1875

    11.875

  • 100

    0.94487

    94.487

  • 500

    0.799501

    399.7505

  • 1000

    0.678366

    678.366

  • 2000

    0.644452

    1288.904

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 7.5mOhm @ 50A, 10V
Power Dissipation (Max) 79W (Tc)
Supplier Device Package 8-DFN (5.2x5.86)
Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2626 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 71A (Tc)