TRS10E65H,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS10E65H,S1Q

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Package:

TO-220-2L

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Description:

G3 SIC-SBD 650V 10A TO-220-2L

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Capacitance @ Vr, F	649pF @ 1V, 1MHz
Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	100 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 10 A