Toshiba Semiconductor and Storage
Product No:
TRS3E65F,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 3A TO220-2L
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.8145
1.8145
10
1.5048
15.048
100
1.197475
119.7475
500
1.013232
506.616
1000
0.859712
859.712
2000
0.816724
1633.448
5000
0.78602
3930.1
10000
0.76
7600
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Mfr | Toshiba Semiconductor and Storage |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Base Product Number | TRS3E65 |
Capacitance @ Vr, F | 12pF @ 650V, 1MHz |
Supplier Device Package | TO-220-2L |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 3A |
Operating Temperature - Junction | 175°C (Max) |
Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |